IGBT, Insulated Gate Bipolar Transistor, is a composite fully-regulated voltage-driven power semiconductor device consisting of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), which combines the high input impedance of MOSFET and GTR. The advantages of low conduction voltage drop. iGBT combines the advantages of the above two devices, with low drive power and reduced saturation voltage. It is very suitable for converter systems with DC voltages of 600V and above, such as AC motors, inverters, switching power supplies, lighting circuits, traction drives, etc.
SATOP®8815 is a clear two component Self-healing Clear Silicone Potting Compound gel. After curing, forms buffer, self-recovery special soft material. Used to insulate moisture and other harmful pollutants from the circuit board, and provide insulation for high voltage. Another purpose is to provide stress relief to protect circuits and interconnections from high temperature and mechanical stress.
|Part A||Part B|
|Composition||Polysiloxane class.||Hydrogen polysiloxane class.|
|Appearance||Colorless liquid||Colorless liquid|
|Specific Gravity, g/cm3||0.99||0.99|
|mixing ratio||A：B = 100：100 Weight ratio|
|Viscosity after mixing||750 CPS|
|Operating time after mixing||60 min 25℃|
5 hours under the 25℃
or 30 min under the 80℃
|Hardened appearance||Colorless clear gel|
|Loss terms(1 MHz)||＜0.001|
|Dielectric constant(1 MHz)||2.8|
|Application temperature range||– 60 ∽ 260 ℃|
Electric power semiconductor IGBT, weighing sensor, automobile ECU integration module and other packaging protection IC chip, electric power telecommunication waterproof connector potting, etc.
Part A: 10kg/barrel, Part B: 10kg/barrel